The SQ2364EES-T1_GE3 is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

• Series: Automotive, AEC-Q101, TrenchFET
• Packaging: Tape and Reel
• Standard Package: 3,000
• Mounting Technology: Surface Mount
• Drain to Source Voltage: 60V
• Continuous Drain Current: 2A (Tc)
• Rds On (Max): 240mOhm @ 2A, 4.5V
• Vgs(th) (Max): 1V @ 250µA
• Power Dissipation: 3W (Tc)
• Package: TO-236-3, SC-59, SOT-23-3
• Gate Charge (Qg) (Max): 2.5 nC @ 4.5 V
• Input Capacitance (Ciss) (Max): 330 pF @ 25 V
• Vgs (Max): ±8V
• Temperature Range: -55°C to 175°C (TJ)
• REACH: Unaffected
• ECCN: EAR99
• Manufacturer: Vishay Siliconix
• Base Product Number: SQ2364