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SQ3427EV-T1_GE3

Part No SQ3427EV-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 5.3A 6TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 95mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 30 V
Power Dissipation (Max) 5W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
Base Product Number SQ3427
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 518497-SQ3427EV-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQ3427EV-T1_GE3 CAD Model

Description

The 518497-SQ3427EV-T1_GE3 is a P-Channel MOSFET transistor with a drain-to-source voltage (Vdss) of 60V.

  • Continuous Drain Current (Id): 5.3A @ 25°C
  • Rds On (Max): 95mOhm @ 4.5A, 10V
  • Gate Charge (Qg): 22nC @ 10V
  • Input Capacitance (Ciss): 1000pF @ 30V
  • Power Dissipation: 5W
  • Package Type: SOT-23-6 Thin, TSOT-23-6
  • Mounting: Surface-Mounted
  • Series: Automotive, AEC-Q101, TrenchFET
  • Operating Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7223 $50.5610
170+ $0.5926 $100.7420
265+ $0.5741 $152.1365
360+ $0.5556 $200.0160
470+ $0.5371 $252.4370
625+ $0.4815 $300.9375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 42,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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