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SQ3469EV-T1_BE3

Part No SQ3469EV-T1_BE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL 20-V (D-S) 175C MOSFET / P-Channel 20 V 8A (Tc) 5W (Tc) Surface Mount 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay Siliconix
Series -
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 36mOhm @ 6.7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1020 pF @ 10 V
FET Feature -
Power Dissipation (Max) 5W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1357300-SQ3469EV-T1_BE3
Ultra Librarian 3D Model Ultra Librarian SQ3469EV-T1_BE3 CAD Model

Description

The SQ3469EV-T1_BE3 is a P-channel MOSFET from Vishay Siliconix.

  • Package: SOT-23-6 Thin or TSOT-23-6
  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 8A
  • Maximum On-Resistance: 36mOhm @ 6.7A and 10V gate-source voltage
  • Gate Charge: 27nC @ 10V gate-source voltage
  • Input Capacitance: 1020pF @ 10V drain-source voltage
  • Maximum Power Dissipation: 5W
  • Operating Temperature: -55°C to 175°C
  • Mounting Type: Surface Mount
  • RoHS Compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.3602 $50.4280
340+ $0.2956 $100.5040
525+ $0.2863 $150.3075
725+ $0.2771 $200.8975
935+ $0.2679 $250.4865
1,250+ $0.2402 $300.2500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,580 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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