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SQ4946AEY-T1_GE3 Real Image SQ4946AEY-T1_GE3 real image14967
Same model may have multiple batches, images only for reference.
SQ4946AEY-T1_GE3 Real Image SQ4946AEY-T1_GE3 real image14967
SQ4946AEY-T1_GE3 Real Image SQ4946AEY-T1_GE3 real image14967
Same model may have multiple batches, images only for reference.

SQ4946AEY-T1_GE3

Part No SQ4946AEY-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 7A / Trans MOSFET N-CH 60V 7A Automotive 8-Pin SOIC N T/R
Datasheet
SQ4946AEY-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 7A
Rds On (Maximum) @ Id, Vgs 40 mOhm @ 4.5A, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 750pF @ 25V
Power - Max 4W
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Package 8-SO
Win Source Part Number 792777-SQ4946AEY-T1_GE3
Popularity Medium
Supply and Demand Status Balance
Family Name SQ4946AEY
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian SQ4946AEY-T1_GE3 CAD Model

Description

The SQ4946AEY-T1_GE3 is a dual N-channel MOSFET manufactured by Vishay Siliconix.

  • Type: Logic Level Gate MOSFET
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Continuous Drain Current: 7 A
  • Maximum On-Resistance: 40 mOhm @ 4.5 A, 10 V
  • Package: 8-SOIC
  • Popularity: Medium
  • RoHS: Compliant
  • Supply and Demand Status: Balance

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