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SQ9407EY-T1_GE3

Part No SQ9407EY-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 4.6A 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1140pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.75W (Tc)
Maximum Rds On at Id,Vgs 85 mOhm @ 3.5A, 10V
Temperature Range - Operating -55°C to 175°C (TA)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1101717-SQ9407EY-T1_GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQ9407EY-T1_GE3 CAD Model

Description

The Vishay SQ9407EY-T1_GE3 is a P-Channel polarity MOSFET that is surface mount device (SMD) compatible.

  • Polarity: P-Channel
  • Mounting Type: SMD
  • Maximum Power Dissipation: 3.75W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 4.6A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Rds On @ Id,Vgs: 85 mOhm @ 3.5A, 10V
  • Case/Package: 8-SO
  • Dimensions: 8-SOIC (0.154", 3.90mm Width)
  • Maximum Gate Charge: 40nC @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Popularity: Popular
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9201 $50.6055
135+ $0.7550 $101.9250
210+ $0.7314 $153.5940
285+ $0.7078 $201.7230
370+ $0.6842 $253.1540
490+ $0.6134 $300.5660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,900 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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