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Same model may have multiple batches, images only for reference.
SQ9945AEY-T1-E3 Vishay
Same model may have multiple batches, images only for reference.

SQ9945AEY-T1-E3

Part No SQ9945AEY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 3.7A 8SOIC
Datasheet
SQ9945AEY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 3.7A
Maximum Rds On at Id,Vgs 80 mOhm @ 3.7A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20nC @ 10V
Maximum Power Dissipation 2.4W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1091045-SQ9945AEY-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SQ9945AEY-T1-E3 CAD Model

Description

The Vishay 2 N-Channel (Dual) FET is a high-quality, logic level gate device that is perfect for use in a variety of applications.

  • Maximum Power Dissipation: 2.4W
  • Mounting Type: SMD (SMT)
  • Continuous Drain Currents: 3.7A
  • Drain-Source Breakdown Voltage: 60V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Rds On: 80 mOhm @ 3.7A, 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: 8-SO

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2087 $60.4350
120+ $0.9918 $119.0160
185+ $0.9609 $177.7665
250+ $0.9298 $232.4500
325+ $0.8988 $292.1100
430+ $0.8059 $346.5370
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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