The Vishay Siliconix SQD100N03-3M4_GE3 is a MOSFET (Metal Oxide) transistor with an N-Channel FET type.

• Drain to Source Voltage (Vdss): 30 V
• Continuous Drain Current (Id) @ 25°C: 100A (Tc)
• Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250μA
• Power Dissipation (Max): 136W (Tc)
• Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA
• Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7349 pF @ 15 V
• Ideal for: Use in various electronic applications