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SQD19P06-60L_GE3

Part No SQD19P06-60L_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 20A TO252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 1490pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 46W (Tc)
Maximum Rds On at Id,Vgs 55 mOhm @ 19A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1101721-SQD19P06-60L_GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQD19P06-60L_GE3 CAD Model

Description

Vishay presents an electronic component with the Win Source Part Number 1101721-SQD19P06-60L_GE3.

  • Category: Discrete Semiconductor Products
  • Status: active
  • Mounting Type: SMD (SMT)
  • Polarity: P-Channel MOSFET
  • Power Dissipation: 46W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 20A (Tc)
  • Gate Charge: 41nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7075 $53.0625
155+ $0.6627 $102.7185
235+ $0.6403 $150.4705
340+ $0.5956 $202.5040
440+ $0.5732 $252.2080
545+ $0.5508 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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