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Same model may have multiple batches, images only for reference.
SQD23N06-31L_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQD23N06-31L_GE3

Part No SQD23N06-31L_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 23A TO252
Datasheet
SQD23N06-31L_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 845pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 37W (Tc)
Maximum Rds On at Id,Vgs 31 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1101722-SQD23N06-31L_GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SQD23N06-31L_GE3 CAD Model

Description

The Vishay SQD23N06-31L_GE3 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Type: N-channel MOSFET
  • Category: Discrete Semiconductor Products
  • Maximum Power Dissipation: 37W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Gate-Source Threshold Voltage @ 250μA: 2.5V
  • Maximum Gate Charge @ 10V: 24nC
  • Maximum Input Capacitance @ 25V: 845pF
  • Maximum Rds On @ 15A, 10V: 31 mOhm
  • Package: TO-252, (D-Pak)
  • Popularity: Medium
  • Supply and Demand Status: Limited

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115+ $1.0085 $115.9775
180+ $0.9771 $175.8780
245+ $0.9456 $231.6720
320+ $0.9141 $292.5120
425+ $0.8195 $348.2875
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