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SQD25N15-52-T4_GE3

Part No SQD25N15-52-T4_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 25 V
Power Dissipation (Max) 107W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SQD25
Other Names 742-SQD25N15-52-T4_GE3TR
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277815-SQD25N15-52-T4_GE3
Ultra Librarian 3D Model Ultra Librarian SQD25N15-52-T4_GE3 CAD Model

Description

The SQD25N15-52-T4_GE3 is an N-channel MOSFET transistor from the TrenchFET series of Vishay Siliconix.

  • Series: TrenchFET
  • Designed to: Provide power switching in various automotive applications
  • Standard Package: 2,500
  • Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain to Source Voltage: 150V
  • Continuous Drain Current: 25A (Tc)
  • Maximum Rds On: 52mOhm @ 15A, 10V
  • Gate Charge: 51 nC @ 10 V
  • Input Capacitance: 2200 pF @ 25 V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0945 $60.1975
130+ $0.8981 $116.7530
200+ $0.8701 $174.0200
275+ $0.8420 $231.5500
355+ $0.8140 $288.9700
475+ $0.7297 $346.6075
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,510 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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