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Same model may have multiple batches, images only for reference.
SQD30N05-20L_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQD30N05-20L_GE3

Part No SQD30N05-20L_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 30A TO252
Datasheet
SQD30N05-20L_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 18nC @ 5V
Max Input Capacitance 1175pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1101724-SQD30N05-20L_GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SQD30N05-20L_GE3 CAD Model

Description

The Vishay SQD30N05-20L_GE3 is a medium popularity N-Channel MOSFET.

  • Application: suitable for use in various applications such as power supplies, DC-DC converters, and motor control circuits
  • Maximum Power Dissipation: 50W (Tc)
  • Drive Voltage: 4.5V and 10V
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 30A (Tc)
  • Maximum Gate Charge: 18nC @ 5V
  • Maximum Input Capacitance: 1175pF @ 25V
  • Package: TO-252AA case
  • Mounting: SMD (SMT) mounted.

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Pricing & Ordering

Quantity Unit Price Ext. Price
410+ $0.1421 $58.2610
995+ $0.1167 $116.1165
1,535+ $0.1132 $173.7620
2,130+ $0.1086 $231.3180
2,750+ $0.1051 $289.0250
3,660+ $0.0947 $346.6020
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Availability: 32,800 pieces
MOQ: 410 pcs
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