The Vishay 988882-SQD50N03-06P-GE3 is a single element power MOSFET transistor with a drain to source voltage (Vdss) of 30 V and a continuous drain current (ID) of 50 A.

• Manufacturer: Vishay
• Drain to Source Voltage (Vdss): 30 V
• Continuous Drain Current (ID): 50 A
• Mounting Type: Surface Mount
• Case/Package: DPAK
• Input Capacitance: 4.03 nF
• Power Dissipation: 83 W
• Maximum Operating Temperature: 175 °C
• Rise Time: 12 ns
• Fall Time: 10 ns
• Turn-On Delay Time: 10 ns
• Turn-Off Delay Time: 30 ns
• Drain to Source Resistance: 6 mΩ
• Gate to Source Voltage (Vgs): 20 V
• Threshold Voltage: 2 V
• Rds On Max: 6 mΩ