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Same model may have multiple batches, images only for reference.
SQD50N06-09L-GE3 Real Image
Same model may have multiple batches, images only for reference.

SQD50N06-09L-GE3

Part No SQD50N06-09L-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 50A
Datasheet
SQD50N06-09L-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 72nC @ 10V
Max Input Capacitance 3065pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 212084-SQD50N06-09L-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SQD50N06-09L-GE3 CAD Model

Description

The SQD50N06-09L-GE3 MOSFET from Vishay is a high-quality component that is designed for use in a variety of electronic applications.

  • Design: Designed to provide excellent performance and reliability, making it ideal for use in a wide range of applications.
  • Supply and Demand Status: Limited, so it may be more difficult to obtain than other components.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.0204 $51.3468
41+ $2.4782 $101.6062
63+ $2.4008 $151.2504
87+ $2.3234 $202.1358
112+ $2.2459 $251.5408
149+ $2.0136 $300.0264
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Availability: 19,200 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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