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SQD50P04-13L_GE3

Part No SQD50P04-13L_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 50A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 3590pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 136W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 17A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1101734-SQD50P04-13L_GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SQD50P04-13L_GE3 CAD Model

Description

The Vishay 1101734-SQD50P04-13L_GE3 is a P-channel MOSFET.

  • Manufacturer: Vishay
  • Maximum Power Dissipation: 3W (Ta), 136W (Tc)
  • Maximum Rds On @ Id,Vgs: 13 mOhm @ 17A, 10V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Supply and Demand Status: Limited
  • Case/Package: TO-252, (D-Pak)
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1208 $50.4360
110+ $0.9196 $101.1560
170+ $0.8909 $151.4530
235+ $0.8622 $202.6170
300+ $0.8334 $250.0200
405+ $0.7472 $302.6160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,900 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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