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Same model may have multiple batches, images only for reference.
BSB053N03LP G Real Image
Same model may have multiple batches, images only for reference.

BSB053N03LP G

Part No BSB053N03LP G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 71A 2WDSON
Datasheet
BSB053N03LP G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 17A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 2700pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.3W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 5.3 mOhm @ 30A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package MG-WDSON-2, CanPAK M
Dimension 3-WDSON
Win Source Part Number 1024318-BSB053N03LP G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSB053N03LP G CAD Model

Description

The Infineon Technologies BSB053N03LP G is a MOSFET transistor used in electronic devices.

  • Category: Discrete semiconductor product
  • Use: Transistor for electronic devices
  • Supply and Demand Status: Sufficient
  • Win Source Part Number: 1024318-BSB053N03LP G
  • Type: N-channel MOSFET transistor
  • Maximum Power Dissipation: 2.3W (Ta), 42W (Tc)
  • Continuous Drain Current: 17A (Ta), 71A (Tc) @ 25°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8521 $59.6470
170+ $0.6992 $118.8640
260+ $0.6773 $176.0980
355+ $0.6555 $232.7025
460+ $0.6336 $291.4560
615+ $0.5680 $349.3200
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Availability: 50,000 pieces
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