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NTD110N02R-001

Part No NTD110N02R-001
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 24V 12.5A IPAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 24V
Continuous Drain Current at 25°C 12.5A (Ta), 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 28nC @ 4.5V
Max Input Capacitance 3440pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta), 110W (Tc)
Maximum Rds On at Id,Vgs 4.6 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1083743-NTD110N02R-001
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTD110N02R-001 CAD Model

Description

Product Overview: NTD110N02R-001 MOSFET

The NTD110N02R-001 is a high-performance N-Channel MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is part of ON Semiconductor's extensive portfolio of power management devices, designed to cater to a wide range of applications that require efficient power conversion and switching.

Featuring advanced trench technology, the NTD110N02R-001 offers excellent on-resistance and low gate charge, making it an ideal choice for power-intensive applications. It operates with a drain-to-source voltage (V<sub>DS) of 24V, which allows for a broad range of operations in circuits. The device is capable of handling continuous drain currents (I<sub>D) up to 110A, making it suitable for high current applications.

The NTD110N02R-001 is designed with a low threshold voltage (V<sub>GS(th)), which ensures that it can be driven at lower gate voltages, thus reducing the overall power consumption of the system. This feature, combined with the low R<sub>DS(on), contributes to its high efficiency and makes it an excellent choice for power supply designs, DC-DC converters, and motor control applications.

The device is housed in a robust and compact DPAK (TO-252) package, which provides good thermal performance and is suitable for surface mount technology (SMT). This packaging allows for efficient heat dissipation and space-saving on the PCB, which is crucial for modern compact electronic designs.

ON Semiconductor's commitment to environmental sustainability is reflected in the NTD110N02R-001, as it is compliant with RoHS (Restriction of Hazardous Substances) standards, ensuring that it is free from harmful substances such as lead, mercury, and cadmium.

In summary, the NTD110N02R-001 from ON Semiconductor is a highly efficient, robust, and reliable N-Channel MOSFET that offers excellent electrical characteristics for a wide range of power management applications. Its advanced features and compact footprint make it a valuable component for designers looking to enhance the performance and efficiency of their electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4220 $59.0800
335+ $0.3463 $116.0105
520+ $0.3354 $174.4080
715+ $0.3246 $232.0890
925+ $0.3139 $290.3575
1,235+ $0.2814 $347.5290
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 53,000 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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