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Same model may have multiple batches, images only for reference.
SQD90P04_9M4LT4GE3
Same model may have multiple batches, images only for reference.

SQD90P04_9M4LT4GE3

Part No SQD90P04_9M4LT4GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQD90P04_9M4LT4GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.4mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6675 pF @ 20 V
Power Dissipation (Max) 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SQD90
Other Names 742-SQD90P04_9M4LT4GE3TR
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277812-SQD90P04_9M4LT4GE3
Ultra Librarian 3D Model Ultra Librarian SQD90P04_9M4LT4GE3 CAD Model

Description

The Vishay Siliconix 1277812-SQD90P04_9M4LT4GE3 is a P-Channel MOSFET transistor that is part of the Automotive, AEC-Q101, TrenchFET® series.

  • Drain to Source Voltage: 40 V
  • Continuous Drain Current: 90A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V
  • Power Dissipation: 136W (Tc)
  • Gate-Source Voltage (Vgs): ±20V
  • Operating Temperature Range: -55°C ~ 175°C (TJ)
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplied in: a TO-252AA package

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