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Same model may have multiple batches, images only for reference.
SQJ202EP-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQJ202EP-T1_GE3

Part No SQJ202EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 12V 20A/60A PPAK SO / Mosfet Array 2 N-Channel (Dual) 12V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric
Datasheet
SQJ202EP-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Manufacturer Vishay Siliconix
Packaging Reel - TR
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 20A, 60A
Rds On (Max) @ Id, Vgs 6.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 975pF @ 6V
Power - Max 27W, 48W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Case / Package PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual Asymmetric
Base Product Number SQJ202
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number SQJ202EP-T1_GE3DKR,SQJ202EP-T1_GE3TR,SQJ202EP-T1_GE3CT
Standard Package 3,000
Win Source Part Number 1324130-SQJ202EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJ202EP-T1_GE3 CAD Model

Description

The 1324130-SQJ202EP-T1_GE3 is a dual N-channel FET from Vishay Siliconix.

  • Manufacturer: Vishay Siliconix
  • Drain to Source Voltage (Vdss): 12V
  • Continuous Drain Current (Id): 20A @ 25°C
  • Maximum On-Resistance (Rds On): 6.5mOhm @ 15A and 10V
  • Mounting: surface mount
  • Package: PowerPAK® SO-8 Dual Asymmetric

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