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Same model may have multiple batches, images only for reference.
SQJ403BEEP-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQJ403BEEP-T1_GE3

Part No SQJ403BEEP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 30A SO8
Datasheet
SQJ403BEEP-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 164nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1005387-SQJ403BEEP-T1_GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SQJ403BEEP-T1_GE3 CAD Model

Description

The Vishay SQJ403BEEP-T1_GE3 is a medium-popularity electronic component that is widely used in various electronic devices.

  • Technology: MOSFET
  • Channel Type: P-Channel
  • Power Dissipation: 68W (Tc)
  • Continuous Drain Current: 30A (Tc) @ 25°C.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0631 $58.4705
135+ $0.8723 $117.7605
210+ $0.8450 $177.4500
285+ $0.8177 $233.0445
370+ $0.7905 $292.4850
490+ $0.7087 $347.2630
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,170 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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