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Same model may have multiple batches, images only for reference.
SQJ431EP-T2_GE3
Same model may have multiple batches, images only for reference.

SQJ431EP-T2_GE3

Part No SQJ431EP-T2_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQJ431EP-T2_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 213mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4355 pF @ 25 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJ431
Other Names 742-SQJ431EP-T2_GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277813-SQJ431EP-T2_GE3
Ultra Librarian 3D Model Ultra Librarian SQJ431EP-T2_GE3 CAD Model

Description

The Vishay Siliconix SQJ431EP-T2_GE3 is a P-channel MOSFET transistor.

  • Series: Automotive, AEC-Q101, TrenchFET
  • Standard Package: 3,000
  • Drain to Source Voltage: 200 V
  • Continuous Drain Current: 12A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 213mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250μA
  • Power Dissipation (Max): 83W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
  • Temperature Range: -55°C to 175°C (TJ)

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