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Same model may have multiple batches, images only for reference.
SQJ446EP-T1_GE3
Same model may have multiple batches, images only for reference.

SQJ446EP-T1_GE3

Part No SQJ446EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQJ446EP-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4220 pF @ 20 V
Power Dissipation (Max) 46W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJ446
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277817-SQJ446EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJ446EP-T1_GE3 CAD Model

Description

The Vishay SQJ446EP-T1_GE3 is an N-channel MOSFET with a 40V drain to source voltage and a continuous drain current of 60A @ 25°C.

  • Drain to Source Voltage: 40V
  • Continuous Drain Current: 60A @ 25°C
  • Maximum Rds On: 5mOhm @ 14A, 10V
  • Gate Charge: 65 nC @ 10V
  • Package: PowerPAK SO-8
  • Series: Automotive, AEC-Q101, TrenchFET series
  • Suitable for: Use in various applications, including power supplies, DC-DC converters, and motor control
  • MSL Level: 1 (unlimited)
  • Operating Temperature Range: -55°C to 175°C (TJ)

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