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SQJ457EP-T1_BE3

Part No SQJ457EP-T1_BE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL 60-V (D-S) 175C MOSFET / P-Channel 60 V 36A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay Siliconix
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3400 pF @ 25 V
Power Dissipation (Max) 68W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1338133-SQJ457EP-T1_BE3
Ultra Librarian 3D Model Ultra Librarian SQJ457EP-T1_BE3 CAD Model

Description

The 1338133-SQJ457EP-T1_BE3 is a P-channel MOSFET transistor from Vishay Siliconix.

  • Manufacturer: Vishay Siliconix
  • Product: 1338133-SQJ457EP-T1_BE3
  • Channel Type: P-Channel MOSFET
  • Package: PowerPAK® SO-8
  • Packaging: Tape and Reel
  • Drain to Source Voltage (Vdss): 60V
  • Power Dissipation (Max): 68W (Tc)
  • Mounting Type: Surface Mount
  • Vgs (Max): ±20V
  • Gate Charge (Qg) (Max): 100 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
  • Standard Package: 3,000
  • ECCN: EAR99
  • HTSUS: 8541.29.0095

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9489 $58.4670
65+ $1.5991 $103.9415
100+ $1.5491 $154.9100
135+ $1.4992 $202.3920
175+ $1.4492 $253.6100
235+ $1.2993 $305.3355
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,133 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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