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Same model may have multiple batches, images only for reference.
SQJ962EP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SQJ962EP-T1-GE3

Part No SQJ962EP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 8A 8SO
Datasheet
SQJ962EP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 60 mOhm @ 4.3A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 475pF @ 25V
Maximum Power Dissipation 25W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 1101741-SQJ962EP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQJ962EP-T1-GE3 CAD Model

Description

The Vishay 473191 is a dual N-channel logic level gate FET designed for use in discrete semiconductor products.

  • Channel Type: N-Channel
  • Maximum Power Dissipation: 25W
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 8A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 14nC @ 10V
  • Maximum Input Capacitance: 475pF @ 25V
  • Popularity: Medium
  • Case/Package: PowerPAK SO-8 Dual
  • Operating Temperature: -55°C to 175°C (TJ)
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.2730 $58.1840
20+ $5.9679 $119.3580
30+ $5.7808 $173.4240
42+ $5.5948 $234.9816
54+ $5.4077 $292.0158
72+ $4.8487 $349.1064
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,740 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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