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SQJA06EP-T1_GE3

Part No SQJA06EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 25 V
Power Dissipation (Max) 55W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJA06
Other Names SQJA06EP-T1_GE3DKR,SQJA06EP-T1_GE3TR,SQJA06EP-T1_GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277834-SQJA06EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJA06EP-T1_GE3 CAD Model

Description

The SQJA06EP-T1_GE3 MOSFET is a N-channel metal oxide semiconductor transistor designed for use in automotive applications.

  • Drain to Source Voltage (Vdss): 60 V
  • Continuous Drain Current (Id): 57A @ 25°C
  • Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
  • Power Dissipation (Max): 55W (Tc)
  • Package: PowerPAK® SO-8 package
  • Series: Automotive, AEC-Q101, TrenchFET® series

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6101 $51.8585
200+ $0.5006 $100.1200
310+ $0.4849 $150.3190
430+ $0.4693 $201.7990
555+ $0.4537 $251.8035
740+ $0.4067 $300.9580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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