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SQJA37EP-T1_GE3

Part No SQJA37EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.2mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 25 V
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJA37
Other Names SQJA37EP-T1_GE3DKR,SQJA37EP-T1_GE3CT,SQJA37EP-T1_GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277790-SQJA37EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJA37EP-T1_GE3 CAD Model

Description

The Vishay Siliconix SQJA37EP-T1_GE3 is a P-channel MOSFET transistor with a drain to source voltage of 30V and a continuous drain current of 30A (Tc).

  • Technology: TrenchFET®
  • Rds On (Max): 9.2mOhm @ 6A, 10V
  • Gate Charge: 100 nC @ 10 V
  • Input Capacitance: 4900 pF @ 25 V
  • Package/Case: PowerPAK® SO-8
  • Supplier Device Package: PowerPAK® SO-8
  • Maximum Vgs: ±20V
  • Temperature Range: -55°C ~ 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.5523 $58.2092
9+ $11.9403 $107.4627
13+ $11.5672 $150.3736
18+ $11.1941 $201.4938
24+ $10.8209 $259.7016
31+ $9.7015 $300.7465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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