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SQJA38EP-T1_GE3

Part No SQJA38EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 25 V
Power Dissipation (Max) 68W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJA38
Other Names SQJA38EP-T1_GE3DKR,SQJA38EP-T1_GE3CT,SQJA38EP-T1_GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277835-SQJA38EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJA38EP-T1_GE3 CAD Model

Description

The Vishay Siliconix SQJA38EP-T1_GE3 MOSFET is a N-Channel FET designed for use in automotive applications.

  • Drain to Source Voltage (Vdss): 40 V
  • Continuous Drain Current (Id): 60A @ 25°C
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 10A, 10V
  • Power Dissipation (Max): 68W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
  • Package: PowerPAK® SO-8 package
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Solution: Reliable and efficient solution for automotive applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.7896 $50.2128
44+ $2.2889 $100.7116
68+ $2.2174 $150.7832
94+ $2.1459 $201.7146
121+ $2.0743 $250.9903
162+ $1.8597 $301.2714
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,800 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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