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Same model may have multiple batches, images only for reference.
SQJA81EP-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQJA81EP-T1_GE3

Part No SQJA81EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQJA81EP-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 17.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5900 pF @ 25 V
Power Dissipation (Max) 68W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJA81
Other Names 742-SQJA81EP-T1_GE3DKR,742-SQJA81EP-T1_GE3CT,742-SQJA81EP-T1_GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277788-SQJA81EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJA81EP-T1_GE3 CAD Model

Description

The Vishay Siliconix Transistors - FETs, MOSFETs - Single is a P-channel MOSFET (Metal Oxide) electronic component that has a drain to source voltage (Vdss) of 80V and a current - continuous drain (Id) @ 25°C of 46A (Tc).

  • Rds On (Max) @ Id, Vgs: 17.3mOhm @ 10A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Temperature Range: -55°C ~ 175°C (TJ)
  • Package/Case: PowerPAK® SO-8
  • Mounting: tape & reel

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