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SQJA82EP-T1_GE3

Part No SQJA82EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V
Power Dissipation (Max) 68W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJA82
Other Names SQJA82EP-T1_GE3DKR,SQJA82EP-T1_GE3CT,SQJA82EP-T1_GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277842-SQJA82EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJA82EP-T1_GE3 CAD Model

Description

The SQJA82EP-T1_GE3 N-Channel MOSFET from Vishay Siliconix is a high-performance transistor that is designed for use in automotive and other applications.

  • Drain to Source Voltage: 80V
  • Continuous Drain Current: 60A @ 25°C
  • Maximum On-Resistance: 8.2mOhm @ 10A and 10V
  • Package: PowerPAK® SO-8
  • Gate Charge: 60nC @ 10V
  • Temperature Range: -55°C to 175°C
  • Series: TrenchFET™

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2224 $55.0080
100+ $1.0030 $100.3000
155+ $0.9717 $150.6135
215+ $0.9403 $202.1645
280+ $0.9090 $254.5200
370+ $0.8150 $301.5500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 164,955 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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