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SQJA84EP-T1_GE3

Part No SQJA84EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 25 V
Power Dissipation (Max) 55W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJA84
Other Names SQJA84EP-T1_GE3CT,SQJA84EP-T1_GE3TR,SQJA84EP-T1_GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277843-SQJA84EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJA84EP-T1_GE3 CAD Model

Description

The SQJA84EP-T1_GE3 is an N-Channel MOSFET manufactured by Vishay Siliconix.

  • Maximum Drain to Source Voltage: 80V
  • Continuous Drain Current: 46A
  • Maximum On-Resistance: 12.5mOhm @ 10A and 10V
  • Gate Charge: 35nC @ 10V
  • Input Capacitance: 2100pF @ 25V
  • Operating Temperature Range: -55°C to 175°C
  • Package: PowerPAK SO-8
  • Ideal for: Automotive applications such as powertrain control, body electronics, and lighting

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9548 $52.5140
130+ $0.7835 $101.8550
200+ $0.7590 $151.8000
275+ $0.7345 $201.9875
355+ $0.7100 $252.0500
475+ $0.6366 $302.3850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,699 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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