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Same model may have multiple batches, images only for reference.
SQJA92EP-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQJA92EP-T1_GE3

Part No SQJA92EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQJA92EP-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 25 V
Power Dissipation (Max) 68W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJA92
Other Names SQJA92EP-T1_GE3DKR,SQJA92EP-T1_GE3CT,SQJA92EP-T1_GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277845-SQJA92EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJA92EP-T1_GE3 CAD Model

Description

The Vishay SQJA92EP-T1_GE3 is an electronic component with high popularity in the market.

  • Type: N-Channel MOSFET
  • Drain to Source Voltage (Vdss): 80V
  • Maximum Power Dissipation: 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
  • Technology: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $10.1866 $50.9330
12+ $8.3583 $100.2996
19+ $8.0971 $153.8449
26+ $7.8359 $203.7334
34+ $7.5747 $257.5398
45+ $6.7911 $305.5995
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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