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Same model may have multiple batches, images only for reference.
SQJB60EP-T2_GE3
Same model may have multiple batches, images only for reference.

SQJB60EP-T2_GE3

Part No SQJB60EP-T2_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQJB60EP-T2_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Rds On (Max) @ Id, Vgs 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V
Power - Max 48W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
Base Product Number SQJB60
Other Names 742-SQJB60EP-T2_GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1278524-SQJB60EP-T2_GE3
Ultra Librarian 3D Model Ultra Librarian SQJB60EP-T2_GE3 CAD Model

Description

The Vishay Siliconix electronic component with Win Source Part Number 1278524-SQJB60EP-T2_GE3 is a great choice for electronic enthusiasts who are looking for a reliable and efficient component.

  • Drain to Source Voltage: 60V
  • Current: 30A (Tc)
  • Rds On (Max): 12mOhm @ 10A, 10V
  • Type: Transistor - FETs, MOSFETs - Arrays
  • Package/Case: PowerPAK® SO-8 Dual

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