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Same model may have multiple batches, images only for reference.
SQJA80EP-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQJA80EP-T1_GE3

Part No SQJA80EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 25 V
Power Dissipation (Max) 68W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJA80
Other Names SQJA80EP-T1_GE3TR,SQJA80EP-T1_GE3DKR,SQJA80EP-T1_GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277795-SQJA80EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJA80EP-T1_GE3 CAD Model

Description

The Vishay SQJA80EP-T1_GE3 is an N-channel MOSFET transistor designed for automotive applications.

  • Maximum Drain to Source Voltage: 80V
  • Maximum Continuous Drain Current: 60A @ 25°C
  • Maximum On Resistance: 7mOhm @ 10A and 10V
  • Maximum Gate Charge: 75nC @ 10V
  • Package: PowerPAK® SO-8 package
  • ECCN: EAR99
  • MSL Level: Unlimited
  • HTSUS: 8541.29.0095

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