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SQJQ404E-T1_GE3

Part No SQJQ404E-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.72mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 16480 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 8 x 8
Package / Case PowerPAK® 8 x 8
Base Product Number SQJQ404
Other Names SQJQ404E-T1_GE3DKR,SQJQ404E-T1_GE3TR,SQJQ404E-T1_GE3CT
Standard Package 2,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277792-SQJQ404E-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJQ404E-T1_GE3 CAD Model

Description

The SQJQ404E-T1_GE3 is an N-channel MOSFET transistor from Vishay Siliconix, designed for use in automotive applications.

  • Drain to Source Voltage (Vdss): 40 V
  • Continuous Drain Current (Id): 200A @ 25°C
  • Maximum On-Resistance (Rds On): 1.72mOhm @ 20A and 10V
  • Maximum Gate-Source Voltage (Vgs): ±20V
  • Gate Charge (Qg): 270 nC @ 10V
  • Input Capacitance (Ciss): 16480 pF @ 25V
  • Package: PowerPAK® 8 x 8
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $20.9553 $62.8659
6+ $17.1941 $103.1646
10+ $16.6568 $166.5680
13+ $16.1195 $209.5535
17+ $15.5821 $264.8957
22+ $13.9702 $307.3444
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,735 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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