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Same model may have multiple batches, images only for reference.
SQM40N10-30_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQM40N10-30_GE3

Part No SQM40N10-30_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 40A TO263
Datasheet
SQM40N10-30_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 62nC @ 10V
Max Input Capacitance 3345pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 107W (Tc)
Maximum Rds On at Id,Vgs 30 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1005451-SQM40N10-30_GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQM40N10-30_GE3 CAD Model

Description

The Vishay SQM40N10-30_GE3 MOSFET is a high-performance, N-channel transistor with a maximum power dissipation of 107W (Tc).

  • Maximum Power Dissipation: 107W (Tc)
  • Temperature Range: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6682 $58.3870
85+ $1.3688 $116.3480
135+ $1.3261 $179.0235
185+ $1.2832 $237.3920
235+ $1.2405 $291.5175
315+ $1.1122 $350.3430
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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