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SQR50N04-3M8_GE3

Part No SQR50N04-3M8_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 50A DPAK  /  N-Channel 40 V 50A (Tc) 136W (Tc) Surface Mount D-PAK (TO-252)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6700 pF @ 25 V
Power Dissipation (Max) 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D-PAK (TO-252)
Package / Case TO-252-4, DPak (3 Leads + Tab)
Base Product Number SQR50
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SQR50N04-3M8_GE3-ND,SQR50N04-3M8_GE3CT,SQR50N04-3M8_GE3TR,SQR50N04-3M8_GE3DKR
Standard Package 2,000
Win Source Part Number 966487-SQR50N04-3M8_GE3
Ultra Librarian 3D Model Ultra Librarian SQR50N04-3M8_GE3 CAD Model

Description

The SQR50N04-3M8_GE3 is an N-channel MOSFET transistor designed for automotive applications.

  • Series: TrenchFET
  • AEC-Q101 Compliant: AEC-Q101 compliant
  • Package: TO-252-4, DPak package
  • Mounting: tape & reel packaging
  • Standard Package: 2000
  • Voltage Reverse Standoff: 40V
  • Continuous Drain Current: 50A
  • Maximum Rds On: 3.8mOhm @ 20A, 10V
  • Gate Charge: 105 nC @ 10V
  • Input Capacitance: 6700 pF @ 25V
  • Operating Temperature Range: -55°C to 175°C

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