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Same model may have multiple batches, images only for reference.
SQS482EN-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQS482EN-T1_GE3

Part No SQS482EN-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16A 1212-8
Datasheet
SQS482EN-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 1865pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 62W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 16.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 1101753-SQS482EN-T1_GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQS482EN-T1_GE3 CAD Model

Description

The Vishay SQS482EN-T1_GE3 is an N-channel MOSFET integrated circuit designed for discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Power Dissipation: 62W (Tc)
  • Drive Voltage: 4.5V (Max Rds On) and 10V (Min Rds On)
  • Package Type: PowerPAK 1212-8
  • Operating Temperature Range: -55°C to 175°C
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 8.5 mOhm @ 16.4A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.6070 $60.7000
235+ $0.4980 $117.0300
360+ $0.4826 $173.7360
495+ $0.4670 $231.1650
640+ $0.4514 $288.8960
860+ $0.4047 $348.0420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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