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Same model may have multiple batches, images only for reference.
SUB70N04-10-E3
Same model may have multiple batches, images only for reference.

SUB70N04-10-E3

Part No SUB70N04-10-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel MOSFETs 40V 70A 120W
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-263-3
Continuous Drain Current (ID) 70 A
Drain to Source Breakdown Voltage 40 V
Drain to Source Resistance 10 mΩ
Drain to Source Voltage (Vdss) 40 V
Element Configuration Single
Fall Time 30 ns
Gate to Source Voltage (Vgs) 20 V
Height 4.83 mm
Length 10.41 mm
Maximum Operating Temperature 175 °C
Max Power Dissipation 107 W
Min Operating Temperature -55 °C
Number of Channels 1
Number of Pins 3
Power Dissipation 107 W
REACH SVHC Unknown
Rise Time 12 ns
RoHS Compliant
Turn-Off Delay Time 58 ns
Turn-On Delay Time 14 ns
Weight 1.437803 g
Width 9.65 mm
Win Source Part Number 995887-SUB70N04-10-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SUB70N04-10-E3 CAD Model

Description

The Vishay 995887-SUB70N04-10-E3 is an N-channel MOSFET transistor that offers a drain to source voltage (Vdss) of 40 V and a continuous drain current (ID) of 70 A.

  • Drain to Source Voltage (Vdss): 40 V
  • Continuous Drain Current (ID): 70 A
  • Gate to Source Voltage (Vgs): 20 V
  • Drain to Source Resistance: 10 mΩ
  • Power Dissipation: 107 W
  • Operating Temperature (Max): 175°C
  • RoHS: Compliant
  • REACH SVHC: Unknown
  • Package: TO-263-3
  • Supply and Demand: Shortage

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