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SUD09P10-195-GE3 Real Image SUD09P10-195-GE3 Real Image
Same model may have multiple batches, images only for reference.
SUD09P10-195-GE3 Real Image SUD09P10-195-GE3 Real Image
SUD09P10-195-GE3 Real Image SUD09P10-195-GE3 Real Image
Same model may have multiple batches, images only for reference.

SUD09P10-195-GE3

Part No SUD09P10-195-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 8.8A DPAK
Datasheet
SUD09P10-195-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 34.8nC @ 10V
Max Input Capacitance 1055pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 32.1W (Tc)
Maximum Rds On at Id,Vgs 195 mOhm @ 3.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1104083-SUD09P10-195-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SUD09P10-195-GE3 CAD Model

Description

The Vishay 1104083-SUD09P10-195-GE3 MOSFET is a P-Channel power MOSFET that can dissipate up to 2.5W of power @ a temperature of 25°C and up to 32.1W of power @ a temperature of 150°C.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 8.8A @ a temperature of 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 34.8nC @ 10V
  • Maximum Input Capacitance: 1055pF @ 50V
  • Maximum Rds On: 195 mOhm @ 3.6A and 10V
  • Mounting Technology: SMD (SMT)
  • Package: TO-252, (D-Pak)
  • Category: Discrete Semiconductor Products
  • Popularity: Popular

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