The Vishay Siliconix MOSFET (Metal Oxide) is a N-Channel FET that features a Drain to Source Voltage (Vdss) of 60 V and a Current - Continuous Drain (Id) @ 25°C of 9.1A (Ta), 21.4A (Tc).

• Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
• Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
• Vgs (Max): ±20V
• Package: TO-252-3, DPak (2 Leads + Tab), SC-63
• Temperature Range: -55°C ~ 150°C (TJ)
• Applications: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single