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Same model may have multiple batches, images only for reference.
SUD50N03-06AP-T4E3 Real Image
Same model may have multiple batches, images only for reference.

SUD50N03-06AP-T4E3

Part No SUD50N03-06AP-T4E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SUD50N03-06AP-T4E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 15 V
Power Dissipation (Max) 10W (Ta), 83W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SUD50
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277520-SUD50N03-06AP-T4E3
Ultra Librarian 3D Model Ultra Librarian SUD50N03-06AP-T4E3 CAD Model

Description

The SUD50N03-06AP-T4E3 is a N-channel MOSFET transistor from Vishay Siliconix's TrenchFET series.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 90A @ 25°C
  • Maximum On-State Resistance: 5.7mOhm @ 20A and 10V
  • Maximum Gate-Source Voltage: ±20V
  • Power Dissipation: 10W (Ta) and 83W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Mounting Technology: SMD (SMT)
  • Packaging: Tape and Reel
  • Standard Package: 2,500
  • Product Status: Obsolete
  • Drive Voltage: 4.5V (max Rds On) and 10V (min Rds On)

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