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Same model may have multiple batches, images only for reference.
SUD50N03-12P-E3 Real Image
Same model may have multiple batches, images only for reference.

SUD50N03-12P-E3

Part No SUD50N03-12P-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V TO252
Datasheet
SUD50N03-12P-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 6.5W (Ta), 46.8W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 057004-SUD50N03-12P-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SUD50N03-12P-E3 CAD Model

Description

The Vishay 057004-SUD50N03-12P-E3 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On: 12 mOhm @ 20A and 10V
  • Power Dissipation: up to 6.5W (Ta) and 46.8W (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 42nC @ 10V
  • Maximum Input Capacitance: 1600pF @ 25V
  • Technology: SMD (SMT)
  • Packaging: TO-252, (D-Pak)
  • Operating Temperature Range: from -55°C to 175°C (TJ)
  • Status: obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0596 $58.2780
135+ $0.8695 $117.3825
210+ $0.8424 $176.9040
285+ $0.8151 $232.3035
370+ $0.7879 $291.5230
495+ $0.7064 $349.6680
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Availability: 9,100 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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