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Same model may have multiple batches, images only for reference.
SUD50N03-16P-E3 Real Image
Same model may have multiple batches, images only for reference.

SUD50N03-16P-E3

Part No SUD50N03-16P-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V TO252 / Trans MOSFET N-CH 30V 37A 3-Pin(2+Tab) DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 13nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 1150pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 6.5W (Ta), 40.8W (Tc)
Rds On (Maximum) @ Id, Vgs 16 mOhm @ 15A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package TO-252, (D-Pak)
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 795836-SUD50N03-16P-E3
Popularity Medium
Supply and Demand Status Limited
Family Name SUD50N03-16P
Introduction Date March 17, 2004
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SUD50N03-16P-E3 CAD Model

Description

The Vishay Siliconix SUD50N03-16P-E3 TrenchFET MOSFET is a high-performance electronic component designed for use in discrete semiconductor products.

  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting: SMD
  • Maximum Drain-Source Voltage: 30V
  • Maximum Gate-Source Voltage: ±20V
  • Current Rating: 15A
  • Maximum Power Dissipation: 6.5W (Ta), 40.8W (Tc)
  • Gate Charge (Qg): 13nC @ 4.5V
  • Input Capacitance (Ciss): 1150pF @ 25V
  • Status: Obsolete (EOL)
  • Estimated EOL Date:
  • Alternative Parts: STD25NE03L, STD20NE03LT4, STD25NE03LT4, and STD20NE03L

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