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Same model may have multiple batches, images only for reference.
SUD50P10-43-E3 Real Image
Same model may have multiple batches, images only for reference.

SUD50P10-43-E3

Part No SUD50P10-43-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 43mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5230 pF @ 50 V
Power Dissipation (Max) 8.3W (Ta), 136W (Tc)
Temperature Range - Operating -50°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SUD50
Standard Package 2,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277505-SUD50P10-43-E3
Ultra Librarian 3D Model Ultra Librarian SUD50P10-43-E3 CAD Model

Description

The Vishay Siliconix SUD50P10-43-E3 is a P-channel MOSFET transistor that is used in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 100V
  • Current Continuous Drain (Id): 38A (Tc)
  • Mounting: TO-252-3, DPak (2 Leads + Tab), SC-63 mounted device
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 9.4A, 10V
  • Operating Temperature Range: -50°C to 175°C (TJ)
  • Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 50 V
  • Package: Tape & Reel (TR)
  • Series: TrenchFET

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