The KSB1116AGTA is a high-performance PNP bipolar transistor manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This transistor is designed for general-purpose amplifier and switching applications, offering a great balance between efficiency and reliability.
Key Features
- High Current Gain Bandwidth Product: With an fT of 150MHz, the KSB1116AGTA is suitable for amplifier applications that require a high-frequency response.
- Low Collector-Emitter Saturation Voltage: This ensures lower power dissipation and improved efficiency during operation.
- High Power Dissipation: With a rating of 1.5W, this transistor can handle a significant amount of power, making it suitable for a wide range of applications.
- PNP Bipolar Junction Transistor: The PNP configuration allows for easy integration into negative ground circuits, which are common in many electronic designs.
- Complementary NPN Type Available: For applications requiring complementary pairs, ON Semiconductor provides a matching NPN transistor, which can be used to create push-pull amplifier configurations.
Applications
The versatility of the KSB1116AGTA makes it an excellent choice for a diverse array of applications. It is particularly well-suited for:
- Audio Amplifiers
- Signal Processing
- Power Management Circuits
- Switching Regulators
- Driver Stages in Hi-Fi Amplifiers
Product Specifications
Parameter
Value
Collector-Base Voltage (VCBO)
-50V
Collector-Emitter Voltage (VCEO)
-45V
Emitter-Base Voltage (VEBO)
-5V
Collector Current (IC)
-1A
Power Dissipation (Pd)
1.5W
DC Current Gain (hFE)
120 to 560
With its robust design and comprehensive specifications, the KSB1116AGTA from ON Semiconductor is a reliable component for designers seeking to create efficient and durable electronic systems.