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KSB1116AGTA

Part No KSB1116AGTA
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 1A TO92-3 / Bipolar (BJT) Transistor PNP 60 V 1 A 120MHz 750 mW Through Hole TO-92-3
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Manufacturer onsemi
Packaging Tape & Box (TB)
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 2V
Power - Max 750 mW
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3
Base Product Number KSB11
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 2,000
Win Source Part Number 1325677-KSB1116AGTA
Ultra Librarian 3D Model Ultra Librarian KSB1116AGTA CAD Model

Description

The KSB1116AGTA is a high-performance PNP bipolar transistor manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This transistor is designed for general-purpose amplifier and switching applications, offering a great balance between efficiency and reliability.

Key Features

  • High Current Gain Bandwidth Product: With an fT of 150MHz, the KSB1116AGTA is suitable for amplifier applications that require a high-frequency response.
  • Low Collector-Emitter Saturation Voltage: This ensures lower power dissipation and improved efficiency during operation.
  • High Power Dissipation: With a rating of 1.5W, this transistor can handle a significant amount of power, making it suitable for a wide range of applications.
  • PNP Bipolar Junction Transistor: The PNP configuration allows for easy integration into negative ground circuits, which are common in many electronic designs.
  • Complementary NPN Type Available: For applications requiring complementary pairs, ON Semiconductor provides a matching NPN transistor, which can be used to create push-pull amplifier configurations.

Applications

The versatility of the KSB1116AGTA makes it an excellent choice for a diverse array of applications. It is particularly well-suited for:

  • Audio Amplifiers
  • Signal Processing
  • Power Management Circuits
  • Switching Regulators
  • Driver Stages in Hi-Fi Amplifiers

Product Specifications

Parameter Value Collector-Base Voltage (VCBO) -50V Collector-Emitter Voltage (VCEO) -45V Emitter-Base Voltage (VEBO) -5V Collector Current (IC) -1A Power Dissipation (Pd) 1.5W DC Current Gain (hFE) 120 to 560

With its robust design and comprehensive specifications, the KSB1116AGTA from ON Semiconductor is a reliable component for designers seeking to create efficient and durable electronic systems.

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