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Same model may have multiple batches, images only for reference.
SUM18N25-165-E3 Vishay
Same model may have multiple batches, images only for reference.

SUM18N25-165-E3

Part No SUM18N25-165-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 165mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 25 V
Power Dissipation (Max) 3.75W (Ta), 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SUM18
Other Names SUM18N25-165-E3CT,SUM18N25-165-E3DKR,SUM18N25165E3,SUM18N25-165-E3,SUM18N25-165-E3TR
Standard Package 800
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277571-SUM18N25-165-E3
Ultra Librarian 3D Model Ultra Librarian SUM18N25-165-E3 CAD Model

Description

The 1277571-SUM18N25-165-E3 electronic component is a MOSFET (Metal Oxide) technology type N-Channel.

  • Package: tape and reel
  • Standard package: 800
  • Mounting: SMD (SMT)
  • Drain to source voltage (Vdss): 250 V
  • Current-continuous drain (Id) @ 25°C: 18A (Tc)
  • Rds On (Max) @ Id, Vgs: 165mOhm @ 14A, 10V

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