The SUM75N06-09L is an N-Channel MOSFET from Vishay Siliconix, designed for high-efficiency power switching applications. This MOSFET is characterized by its low on-resistance and logic-level gate drive, enabling efficient performance and direct compatibility with microcontrollers and other low-voltage control circuits. The 'L' suffix signifies its logic-level gate drive capability.

Applications

• Synchronous rectification in AC-DC and DC-DC converters
• Motor control systems
• Battery management systems (BMS)
• Load switching applications
• Power inverters

Features

• N-Channel MOSFET
• Logic-Level Gate Drive
• Low On-Resistance (RDS(on))
• Fast Switching Speed
• RoHS Compliant

Benefits

• Easy Microcontroller Integration: The logic-level gate drive allows direct interfacing with microcontrollers and other low-voltage control circuits, simplifying design and reducing component count.
• Improved Efficiency: Low on-resistance minimizes conduction losses, leading to higher efficiency and reduced heat generation.
• Faster Switching: Enables operation at higher frequencies, resulting in smaller and more cost-effective power supply designs.
• Simplified Thermal Management: Reduced power dissipation simplifies heat sink requirements, lowering overall system cost.
• Environmentally Friendly: RoHS compliance ensures the product is free of hazardous substances.

Specifications

The SUM75N06-09L features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 75A. Its typical on-resistance (RDS(on)) is 9 mΩ at a gate-source voltage (VGS) of 10V. The RDS(on) is also specified at lower gate voltages, such as 4.5V. The gate threshold voltage (VGS(th)) is typically low, around 1-2V. This MOSFET is typically packaged in a TO-252 (DPAK) package for efficient heat dissipation. Its operating junction temperature ranges from -55°C to +175°C, ensuring reliable performance in a wide range of operating conditions. Designed for surface mount applications on a PCB, promoting efficient assembly and layout.