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Same model may have multiple batches, images only for reference.
SUM85N03-06P-E3 Real Image
Same model may have multiple batches, images only for reference.

SUM85N03-06P-E3

Part No SUM85N03-06P-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 85A D2PAK
Datasheet
SUM85N03-06P-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 3100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.75W (Ta), 100W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1104121-SUM85N03-06P-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUM85N03-06P-E3 CAD Model

Description

The Vishay SUM85N03-06P-E3 is a MOSFET designed by Vishay.

  • Polarity: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Power Dissipation: 3.75W (Ta) and 100W (Tc)
  • Continuous Drain Current: 85A (Tc) @ 25°C
  • Drive Voltage: 4.5V (max Rds On) and 10V (min Rds On)
  • Package: TO-263 (D2Pak)
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Product Status: obsolete product
  • Maximum Rds On: 6 mOhm @ 20A, 10V
  • RoHS State: yet to be verified

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.8203 $62.5624
18+ $6.4167 $115.5006
28+ $6.2162 $174.0536
39+ $6.0157 $234.6123
50+ $5.8151 $290.7550
67+ $5.2136 $349.3112
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Availability: 150 pieces
MOQ: 8 pcs
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