The SUP50010E-GE3 is a MOSFET transistor from Vishay Siliconix that belongs to the TrenchFET™ series of FETs.

• Transistor Type: N-channel
• Drain to Source Voltage (Vdss): 60V
• Continuous Drain Current (Id) @ 25°C: 150A (Tc)
• Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Power Dissipation (Max): 375W (Tc)
• Mounting Type: Through-Hole
• Package/Case: TO-220-3
• Packaging: Tube
• Gate Charge (Qg) (Max) @ Vgs: 212nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10895pF @ 30V
• Vgs (Max): ±20V
• Temperature Range: -55°C ~ 175°C (TJ)
• MSL Level: 1 (unlimited)
• HTSUS Code: 8541.29.0095
• Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V