The TCDT1101GA is a high-sensitivity silicon NPN phototransistor in a miniature surface-mount package, manufactured by Vishay Semiconductors. It is designed for applications requiring precise detection of infrared (IR) light. Its compact size and high sensitivity make it suitable for a wide range of sensing and control applications.

Applications

• Optical switches
• Light barriers
• Proximity sensors
• Position sensors
• Industrial automation
• Consumer electronics (e.g., remote controls, light dimmers)

Features

• High sensitivity: Detects weak IR signals.
• Miniature surface-mount package: Allows for high-density PCB layouts.
• Spectral sensitivity matched to IR emitters: Optimized for use with standard IR LEDs.
• Fast switching speed: Enables rapid response to changes in light intensity.
• RoHS compliant: Environmentally friendly construction.

Benefits

• Precise detection: High sensitivity ensures accurate sensing in various environments.
• Compact design: Allows for integration into small and space-constrained devices.
• Easy integration: Surface mount package simplifies the assembly process.
• Reliable performance: Robust design ensures stable operation over a wide temperature range.
• Cost-effective solution: Provides a high-performance sensing solution at a competitive price.

Technical Specifications

The TCDT1101GA has a peak sensitivity wavelength of around 950 nm, making it ideal for use with standard IR LEDs. Its collector-emitter voltage (VCEO) is typically around 30V, and its collector current (IC) is typically in the tens of milliamps. The exact values for these parameters, as well as switching speeds, will be found on the datasheet for the TCDT1101GA. The operating temperature range is generally from -40°C to +85°C. Its package dimensions are very small to allow for high density mounting.