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TN0201K-T1-E3

Part No TN0201K-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 420MA SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 420mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 1.5nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 350mW (Ta)
Maximum Rds On at Id,Vgs 1 Ohm @ 300mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 122142-TN0201K-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TN0201K-T1-E3 CAD Model

Description

TN0201K-T1-E3 from Vishay is an RF MOSFET intended for designs that require compact transistor solutions in high-frequency signal paths and related switching or amplification stages. Engineers may evaluate parts in this category for RF front ends, signal conditioning blocks, portable wireless equipment, test hardware, and other space-constrained electronic systems where proven supplier pedigree matters. As a Vishay device, TN0201K-T1-E3 is typically positioned as a practical option for teams seeking recognizable manufacturing support and traceable sourcing for maintenance builds or new design review. The current lifecycle status for this part is information not available, so design and procurement teams should confirm latest manufacturer guidance before committing to long-term programs. RoHS compliance status is also information not available in the provided data. For compliance-sensitive applications, engineers should verify the latest datasheet, material declaration, and manufacturer compliance documentation before release to production.

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